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 STC08DE150HP
Hybrid emitter switched bipolar transistor ESBT 1500V - 8A - 0.075
Preliminary Data
General features
Table 1.
VCS(ON) 0.6V

General features
IC 8A RCS(ON) 0.075
Low equivalent on resistance Very fast-switch, up to 150 kHz Squared RBSOA, up to 1500 V Very low CISS driven by RG = 47 In compliance with the 2002/93/EC European Directive
TO247-4L HP
Description
The STC08DE150HP is manufactured in a hybrid structure, using dedicated high voltage Bipolar and low voltage MOSFET technologies, aimed at providing the best performance in ESBT topology. The STC08DE150HP is designed for use in aux flyback smps for any three phase application.
Internal schematic diagrams
Applications
Single switch SMPS based on three phase mains
Order codes
Part Number STC08DE150HP Marking C08DE150HP Package TO247-4L HP Packing Tube
October 2006
Rev 1
1/11
www.st.com 11
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
W
(R)
STC08DE150HP
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 2.2 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3 4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
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STC08DE150HP
Electrical ratings
1
Electrical ratings
Table 2.
Symbol VCS(SS) VBS(OS) VSB(OS) VGS IC ICM IB IBM Ptot Tstg TJ
Absolute maximum ratings
Parameter Collector-source voltage (V BS =VGS =0V) Base-source voltage (IC =0, VGS =0V) Source-base voltage (IC =0, VGS =0V) Gate-source voltage Collector current Collector peak current (tP < 5ms) Base current Base peak current (tP < 1ms) Total dissipation at T c 25C Storage temperature Max. operating junction temperature Value 1500 30 9 Unit V V V V A A A A W C C
20
8 15 4 8 42 -40 to 150 125
Table 3.
Symbol Rthj-case
Thermal data
Parameter Thermal resistance junction-case max Value 2.4 Unit C/W
3/11
Electrical characteristics
STC08DE150HP
2
Electrical characteristics
(Tcase = 25C unless otherwise specified) Table 4.
Symbol ICS(SS) IBS(OS) ISB(OS) IGS(OS) VCS(ON)
Electrical characteristics
Parameter Test Conditions Min. Typ. Max. 100 10 100 500 IB =1.6A IB =0.5A VGS =10V VGS =10V 4.5 8 0.6 0.6 7.5 10 1.5 1 1.5 2.2 750 2 V V V pF 1.4 Unit A A A nA V V
Collector-source =1500V V current (VBS =VGS =0V) CS(SS) Base-source current (IC =0, V GS =0V) Source-base current (IC =0, V GS =0V) Gate-source leakage (VBS =0V) Collector-source ON voltage DC current gain Base-source ON voltage Gate threshold voltage Input capacitance VBS(OS) =30V VSB(OS) =9V VGS = 20V VGS =10V VGS =10V IC =8A IC =5A IC =8A IC =5A
hFE VBS(ON) VGS(th) Ciss QGS(tot)
V CS =1V V CS =1V
VGS =10V VGS =10V VBS =VGS VCS =25V VGS =10V VCS =25V VGS =10V
IC =8A IB =1.6A IC =5A IB =0.5A IB =250A f =1MHz
3
VGS=VCB=0V IC =8A VCB=0V RG =47 tp =4s IB =0.5A RG =47 tp =4s IB =1A hFE =5
Gate-source Charge INDUCTIVE LOAD Storage time Fall time INDUCTIVE LOAD Storage time Fall time Maximum collectorsource voltage switched without snubber
12.5
nC
ts tf ts tf
VClamp =1200V IC =5A VGS =10V VClamp =1200V IC =5A RG =47 IC = 8A
526 8.5
ns ns
884 16
ns ns
VCSW
1500
V
4/11
STC08DE150HP Table 4.
Symbol
Electrical characteristics Electrical characteristics
Parameter Collector-source dynamic voltage (500ns) Test Conditions VCC =V Clamp =300V VGS =10V IB = 0.8A RG =47 VGS =10V IB = 0.8A RG =47 IC = 4A tpeak =500ns IBpeak = 8A (2IC ) IC = 4A tpeak =500ns IBpeak = 8A (2IC ) 6 V Min. Typ. Max. Unit
VCS(dyn)
VCS(dyn)
Collector-source dynamic voltage (1s)
VCC =V Clamp =300V 2.2 V
Note (1) Pulsed duration = 300 s, duty cycle 1.5%
2.1
Electrical characteristics (curves)
Figure 1. Output characteristics Figure 2. Dynamic collector-emitter saturation voltage
Figure 3.
DC current gain
Figure 4.
Gate threshold voltage vs temperature
5/11
Electrical characteristics Figure 5. Collector-source On voltage Figure 6.
STC08DE150HP Collector-source On voltage
Figure 7.
Base-source On voltage
Figure 8.
Base-source On voltage
Figure 9.
Inductive load switching time Figure 10. Inductive load switching time
6/11
STC08DE150HP Figure 11. Reverse biased safe operating area
Electrical characteristics
2.2
Test circuits
Figure 12. Enlargement FBSOA circuit
Table 5.
Components, values
VB1 =4.16V D1 =BA157 R1 =1 R2 =100 R3 =180 Rg =47
C1 =4700F C2 1000pF VCC =1500V Vg =10V Pulse time = 5s
7/11
Package mechanical data
STC08DE150HP
3
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
8/11
STC08DE150HP
Package mechanical data
TO247-4LHP MECHANICAL DATA
DIM. A A1 A2 A3 b b1 b2 c D D1 E e e1 L L1 L2 L3 oP S
MIN. 5.50 2.85
0.95 1.10 2.50 0.40 23.85 15.45 2.54 10.20 2.20
mm. TYP 5.65 3.15 1.92 3.18 1.10
MAX. 5.80 3.25
24 21.50 15.60 5.08 2.50 18.50 3 5.50
1.30 1.50 2.90 0.80 24.15 15.75
10.80 2.80
3.55
3.65
7908765A
9/11
Revision history
STC08DE150HP
4
Revision history
Table 6.
Date 26-Oct-2006
Revision history
Revision 1 First release. Changes
10/11
STC08DE150HP
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